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Showing results 1 to 10 of 28 (Search time: 0.0 seconds).

Enabling double mott transitions at high temperatures in Ti–VOx formed by proximity-oxidation for neuromorphic image recognition based on CNN-LeNet
  • Iqbal, Shahid;
  • Kumar, Mohit;
  • Safder, Usman;
  • Ali, Rana Basit;
  • Sial, Qadeer Akbar;
  • Khan, Amir Sohail;
  • Kim, Junmo;
  • Lee, Jinchan;
  • Seo, Hyungtak
  • 2025-01-01
  • Surfaces and Interfaces, Vol.56
  • Elsevier B.V.
Femtojoule-Power-Consuming Synaptic Memtransistor Based on Mott Transition of Multiphasic Vanadium Oxides
  • 2021-11-01
  • Advanced Functional Materials, Vol.31
  • John Wiley and Sons Inc
Light-Regulated Mott Transition for On-Demand Multilevel Memory Storage, Processing, and Energy Efficient Machine Vision
  • 2021-04-01
  • Advanced Electronic Materials, Vol.7
  • Blackwell Publishing Ltd
Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx
  • Won, Seokjae;
  • Lee, Sang Yeon;
  • Hwang, Jungyeon;
  • Park, Jucheol;
  • Seo, Hyungtak
  • 2018-01-01
  • Electronic Materials Letters, Vol.14, pp.14-22
  • The Korean Institute of Metals and Materials
Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2oa mark
  • Yang, Hyungryul;
  • Lee, Byeongin;
  • Bang, Junho;
  • Kim, Sunghun;
  • Wulferding, Dirk;
  • Lee, Sung Hoon;
  • Cho, Doohee
  • 2024-07-24
  • Advanced Science, Vol.11
  • John Wiley and Sons Inc
전이금속산화물을 이용한 가변저항 소자에 관한 연구
  • 원석재
  • 2017-08
  • The Graduate School, Ajou University
Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel
  • 2020-05-01
  • Journal of Materials Science and Technology, Vol.44, pp.96-101
  • Chinese Society of Metals
Charge-ordered phases in the hole-doped triangular Mott insulator 4 Hb - TaS2oa mark
  • Bang, Junho;
  • Lee, Byeongin;
  • Yang, Hyungryul;
  • Kim, Sunghun;
  • Wulferding, Dirk;
  • Cho, Doohee
  • 2024-05-15
  • Physical Review B, Vol.109
  • American Physical Society
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