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Showing results 1 to 10 of 3892 (Search time: 0.0 seconds).

Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor
  • 2021-01-01
  • IEEE Electron Device Letters, Vol.42, pp.50-53
  • Institute of Electrical and Electronics Engineers Inc.
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristoroa mark
  • 2021-12-01
  • NPG Asia Materials, Vol.13
  • Nature Research
Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
Analysis and Prediction of Nanowire TFET’s Work Function Variation
  • 2024-04-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.96-104
  • Institute of Electronics Engineers of Korea
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors
  • 2024-09-10
  • ACS Nano, Vol.18, pp.25009-25017
  • American Chemical Society
Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
  • 2019-06-01
  • Journal of the Korean Physical Society, Vol.74, pp.1171-1175
  • The Korean Physical Society
Quantitative and rapid detection of iodide ion via electrolyte-gated IGZO thin-film transistors
  • Hwang, Chuljin;
  • Kwak, Taehyun;
  • Kim, Chang Hyun;
  • Kim, Joo Hee;
  • Park, Sungjun
  • 2022-02-15
  • Sensors and Actuators B: Chemical, Vol.353
  • Elsevier B.V.
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