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Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation
An, Do Gyun;
Kim, Garam;
Kim, Hyunwoo;
Kim, Sangwan;
Kim, Jang Hyun
2024-01-01
Semiconductor Science and Technology, Vol.39
Institute of Physics
확장 게이트 구조의 접합이 없는 터널 전계 효과 트랜지스터
박소라
2022-02
The Graduate School, Ajou University
1
필터
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Author
An, Do Gyun
1
Kim, Garam
1
Kim, Hyunwoo
1
Kim, Jang Hyun
1
Kim, Sangwan
1
박소라
1
Type
Article
1
Thesis
1
Keyword
gate-all-around FET
1
high temperature
1
junctionless
1
junctionless tunnel field-effect ...
1
nanosheet-FET (nsFET)
1
reconfigurable TFET
1
self-heating effect (SHE)
1
thermal characteristics
1
zero-temperature coefficient (ZTC)
1
Date issued
2020 - 2025
2
Journal
Semiconductor Science and Technology
1
