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Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors
  • 2022-05-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
A Built-In Self-Repair With Maximum Fault Collection and Fast Analysis Method for HBM
  • Yoon, Joonsik;
  • Lee, Hayoung;
  • Moon, Youngki;
  • Shin, Seung Ho;
  • Kang, Sungho
  • 2024-01-01
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Institute of Electrical and Electronics Engineers Inc.
An Efficient Test Architecture Using Hybrid Built-In Self-Test for Processing-in-Memory
  • 2024-01-01
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Institute of Electrical and Electronics Engineers Inc.
Switchable Polar Nanotexture in Nanolaminates HfO2-ZrO2 for Ultrafast Logic-in-Memory Operations
  • 2023-06-21
  • Small, Vol.19
  • John Wiley and Sons Inc
Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
Ink: In-kernel key-value storage with persistent memoryoa mark
  • 2020-11-01
  • Electronics (Switzerland), Vol.9, pp.1-22
  • MDPI AG
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