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Showing results 1 to 10 of 5403 (Search time: 0.0 seconds).

Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristoroa mark
  • 2021-12-01
  • NPG Asia Materials, Vol.13
  • Nature Research
Simple Solvent Engineering for High-Mobility and Thermally Robust Conjugated Polymer Nanowire Field-Effect Transistors
  • Jeon, Gyeong G.;
  • Lee, Myeongjae;
  • Nam, Jinwoo;
  • Park, Wongi;
  • Yang, Minyong;
  • Choi, Jong Ho;
  • Yoon, Dong Ki;
  • Lee, Eunji;
  • Kim, Bongsoo;
  • Kim, Jong H.
  • 2018-09-05
  • ACS Applied Materials and Interfaces, Vol.10, pp.29824-29830
  • American Chemical Society
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
  • Kim, Y. C.;
  • Son, B. H.;
  • Jeong, H. Y.;
  • Park, K. H.;
  • Ahn, Y. H.
  • 2019-04-01
  • Current Applied Physics, Vol.19, pp.406-410
  • Elsevier B.V.
Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructuresoa mark
  • Choi, Ji Hyeon;
  • Seok, Tae Jun;
  • Kim, Sang June;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2025-02-10
  • Advanced Science, Vol.12
  • John Wiley and Sons Inc
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin-Film Transistors
  • Kim, Wonsik;
  • Lee, Won June;
  • Kwak, Taehyun;
  • Baek, Seokhyeon;
  • Lee, Seung Hoon;
  • Park, Sungjun
  • 2022-04-01
  • Advanced Materials Interfaces, Vol.9
  • John Wiley and Sons Inc
Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors
  • 2024-09-10
  • ACS Nano, Vol.18, pp.25009-25017
  • American Chemical Society
Interface trap-induced temperature dependent hysteresis and mobility in β-Ga2O3 field-effect transistorsoa mark
  • 2021-02-01
  • Nanomaterials, Vol.11, pp.1-10
  • MDPI AG
Junction Temperature Estimation of Direct-Drive GaN HEMTs in Two-Level Inverters for Driving PMSM Through Power Loss Analysis
  • 2024-05-01
  • Journal of Electrical Engineering and Technology, Vol.19, pp.2205-2216
  • Korean Institute of Electrical Engineers
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