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Showing results 1 to 10 of 1104 (Search time: 0.0 seconds).

Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor
  • 2021-01-01
  • IEEE Electron Device Letters, Vol.42, pp.50-53
  • Institute of Electrical and Electronics Engineers Inc.
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
  • 2019-06-01
  • Journal of the Korean Physical Society, Vol.74, pp.1171-1175
  • The Korean Physical Society
Analysis of thermal effects according to channel and drain contact metal distanceoa mark
  • 2025-01-01
  • Case Studies in Thermal Engineering, Vol.65
  • Elsevier Ltd
Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfacesoa mark
  • Kang, Dong Hee;
  • Choi, Jun Gyu;
  • Lee, Won June;
  • Heo, Dongmi;
  • Wang, Sungrok;
  • Park, Sungjun;
  • Yoon, Myung Han
  • 2023-06-01
  • APL Bioengineering, Vol.7
  • American Institute of Physics Inc.
Quantitative and rapid detection of iodide ion via electrolyte-gated IGZO thin-film transistors
  • Hwang, Chuljin;
  • Kwak, Taehyun;
  • Kim, Chang Hyun;
  • Kim, Joo Hee;
  • Park, Sungjun
  • 2022-02-15
  • Sensors and Actuators B: Chemical, Vol.353
  • Elsevier B.V.
Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
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