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Showing results 1 to 10 of 974 (Search time: 0.0 seconds).

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputteroa mark
  • 2024-09-01
  • Nanomaterials, Vol.14
  • Multidisciplinary Digital Publishing Institute (MDPI)
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
  • 2023-04-01
  • Surfaces and Interfaces, Vol.37
  • Elsevier B.V.
Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
Ultrahigh-speed absolute temperature sensing using ferroelectric HfO2 enabled by transient negative differential capacitanceoa mark
  • 2024-08-30
  • Nanoscale, Vol.16, pp.18027-18037
  • Royal Society of Chemistry
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
High-Performing Self-Powered Photosensing and Reconfigurable Pyro-photoelectric Memory with Ferroelectric Hafnium Oxide
  • 2022-02-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
  • Lee, Suk Hyun;
  • Park, Han Sol;
  • Shin, Seong Jae;
  • Lee, In Soo;
  • Ryoo, Seung Kyu;
  • Byun, Seungyong;
  • Kim, Kyung Do;
  • Moon, Taehwan;
  • Hwang, Cheol Seong
  • 2024-12-01
  • Applied Physics Reviews, Vol.11
  • American Institute of Physics
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