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Etching of Si-based materials using fluorocarbon plasmas : Etch characteristics and its applications
  • 김준현
  • 2019-02
  • The Graduate School, Ajou University
SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether
  • 2020-04-01
  • Applied Surface Science, Vol.508
  • Elsevier B.V.
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
C4F6/Ar/O2 플라즈마에서 CH2F2 첨가에 따른 SiO2와 Si3N4의 식각속도 및 식각선택비의 각도의존성
  • 조성운
  • 2011-02
  • The Graduate School, Ajou University
메가소닉 교반에 의한 습식 식각 시스템 특성 개선
  • Park, Tae Gyu
  • 2008-08
  • The Graduate School, Ajou University
New plasma etching techniques for control over Si and SiO2 etch profiles
  • 조성운
  • 2015-08
  • The Graduate School, Ajou University
Plasma atomic layer etching of molybdenum with surface fluorination
  • Kim, Yongjae;
  • Kang, Hojin;
  • Ha, Heeju;
  • Kim, Changkoo;
  • Cho, Sungmin;
  • Chae, Heeyeop
  • 2023-08-01
  • Applied Surface Science, Vol.627
  • Elsevier B.V.
Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasmaoa mark
  • 2024-08-01
  • Materials, Vol.17
  • Multidisciplinary Digital Publishing Institute (MDPI)
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