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Showing results 1 to 10 of 1703 (Search time: 0.0 seconds).

메가소닉 교반에 의한 습식 식각 시스템 특성 개선
  • Park, Tae Gyu
  • 2008-08
  • The Graduate School, Ajou University
Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasmaoa mark
  • 2024-08-01
  • Materials, Vol.17
  • Multidisciplinary Digital Publishing Institute (MDPI)
Plasma etching of SiO2 contact hole using perfluoropropyl vinyl ether and perfluoroisopropyl vinyl ether
  • 2022-01-01
  • Korean Journal of Chemical Engineering, Vol.39, pp.63-68
  • Springer
Etching of Si-based materials using fluorocarbon plasmas : Etch characteristics and its applications
  • 김준현
  • 2019-02
  • The Graduate School, Ajou University
Controlling Bowing and Narrowing in SiO2 Contact-Hole Etch Profiles Using Heptafluoropropyl Methyl Ether as an Etchant with Low Global Warming Potentialoa mark
  • You, Sanghyun;
  • Yang, Hyun Seok;
  • Jeon, Dongjun;
  • Chae, Heeyeop;
  • Kim, Chang Koo
  • 2023-08-01
  • Coatings, Vol.13
  • Multidisciplinary Digital Publishing Institute (MDPI)
Plasma etching of SiO2 using heptafluoropropyl methyl ether and perfluoropropyl vinyl ether
  • 2018-01-01
  • ECS Journal of Solid State Science and Technology, Vol.7, pp.Q218-Q221
  • Electrochemical Society Inc.
Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8oa mark
  • 2022-05-01
  • Coatings, Vol.12
  • MDPI
Heptafluoroisopropyl Methyl Ether as a Low Global Warming Potential Alternative for Plasma Etching of SiCoa mark
  • 2024-05-01
  • Korean Journal of Chemical Engineering, Vol.41, pp.1307-1310
  • Springer
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
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