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Investigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles
  • Kim, Ji Hwan ;
  • Jo, Il Young ;
  • Baek, Seokhyeon ;
  • Cho, Hong Rae ;
  • Park, Sungjun ;
  • Lee, Jongwon ;
  • Kim, Chang Hyun ;
  • Yoon, Myung Han
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Publication Year
2024-04-08
Publisher
Royal Society of Chemistry
Citation
Journal of Materials Chemistry C, Vol.12, pp.5941-5950
Mesh Keyword
Bias stressCharge-trappingCircuit developmentDeposited metalDevice developmentInduced chargesNondestructive readoutOrganic field-effect transistorsStable operationStress-induced
All Science Classification Codes (ASJC)
Chemistry (all)Materials Chemistry
Abstract
Despite the promise of organic field effect transistor-based non-destructive readout devices and circuit development, the challenges in bias stress-induced charge trapping for stable operation still persist. This study introduces optically programmable organic field-effect transistors based on metal nanoparticles’ plasmonic effects. Noble metal nanoparticles vacuum-deposited on an organic semiconductor layer not only enhance photon absorption and photocarrier generation but also function as charge trapping centers, thereby, modulating charge retention characteristics. According to the proposed mechanism on optical programming, we expect that the proposed device architecture may contribute to development of advanced information technology devices.
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/34115
DOI
https://doi.org/10.1039/d3tc03609j
Fulltext

Type
Article
Funding
M.-H. Y. acknowledges support from a National Research Foundation (NRF) grant funded by the Korean government (MSIT) (NRF-2020M1A2A2080748, NRF-2022M3C1C5A01097681, and NRF-2021R1A2C1013015).
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Park, Sungjun 박성준
Department of Electrical and Computer Engineering
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