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Investigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles
  • Kim, Ji Hwan ;
  • Jo, Il Young ;
  • Baek, Seokhyeon ;
  • Cho, Hong Rae ;
  • Park, Sungjun ;
  • Lee, Jongwon ;
  • Kim, Chang Hyun ;
  • Yoon, Myung Han
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dc.contributor.authorKim, Ji Hwan-
dc.contributor.authorJo, Il Young-
dc.contributor.authorBaek, Seokhyeon-
dc.contributor.authorCho, Hong Rae-
dc.contributor.authorPark, Sungjun-
dc.contributor.authorLee, Jongwon-
dc.contributor.authorKim, Chang Hyun-
dc.contributor.authorYoon, Myung Han-
dc.date.issued2024-04-08-
dc.identifier.urihttps://dspace.ajou.ac.kr/dev/handle/2018.oak/34115-
dc.description.abstractDespite the promise of organic field effect transistor-based non-destructive readout devices and circuit development, the challenges in bias stress-induced charge trapping for stable operation still persist. This study introduces optically programmable organic field-effect transistors based on metal nanoparticles’ plasmonic effects. Noble metal nanoparticles vacuum-deposited on an organic semiconductor layer not only enhance photon absorption and photocarrier generation but also function as charge trapping centers, thereby, modulating charge retention characteristics. According to the proposed mechanism on optical programming, we expect that the proposed device architecture may contribute to development of advanced information technology devices.-
dc.description.sponsorshipM.-H. Y. acknowledges support from a National Research Foundation (NRF) grant funded by the Korean government (MSIT) (NRF-2020M1A2A2080748, NRF-2022M3C1C5A01097681, and NRF-2021R1A2C1013015).-
dc.language.isoeng-
dc.publisherRoyal Society of Chemistry-
dc.subject.meshBias stress-
dc.subject.meshCharge-trapping-
dc.subject.meshCircuit development-
dc.subject.meshDeposited metal-
dc.subject.meshDevice development-
dc.subject.meshInduced charges-
dc.subject.meshNondestructive readout-
dc.subject.meshOrganic field-effect transistors-
dc.subject.meshStable operation-
dc.subject.meshStress-induced-
dc.titleInvestigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles-
dc.typeArticle-
dc.citation.endPage5950-
dc.citation.startPage5941-
dc.citation.titleJournal of Materials Chemistry C-
dc.citation.volume12-
dc.identifier.bibliographicCitationJournal of Materials Chemistry C, Vol.12, pp.5941-5950-
dc.identifier.doi10.1039/d3tc03609j-
dc.identifier.scopusid2-s2.0-85189981458-
dc.identifier.urlhttp://pubs.rsc.org/en/journals/journal/tc-
dc.description.isoafalse-
dc.subject.subareaChemistry (all)-
dc.subject.subareaMaterials Chemistry-
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