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High-Performance Thin-Film VCSELs Integrated with a Copper-Plated Heatsinkoa mark
  • Moon, Sunghyun ;
  • Yun, Yeojun ;
  • Kwon, Ohdo ;
  • Nam, Yonghyun ;
  • Kim, Donghwan ;
  • Choi, Won jin ;
  • Kim, Sangin ;
  • Lee, Jaejin
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Publication Year
2023-06-27
Publisher
John Wiley and Sons Inc
Citation
Advanced Materials Interfaces, Vol.10
Keyword
heatsinkhigh powerhigh reliabilitylow-power consumptionthin-film VCSEL
Mesh Keyword
HeatsinkHigh powerHigh reliabilityLow-power consumptionLower-power consumptionPerformanceThin-film vertical-cavity surface-emitting laserThin-filmsTop-emittingVertical-cavity surface emitting laser
All Science Classification Codes (ASJC)
Mechanics of MaterialsMechanical Engineering
Abstract
High-performance continuous-wave (CW) vertical-cavity surface-emitting lasers (VCSELs) rely on efficient thermal management for which top-emitting 930 nm thin-film VCSELs are integrated with a copper-plated heatsink by using a double-transfer technique, exhibiting the low-power consumption, high-power, and temperature-stable VCSEL operation. In this study, the top-emitting 930 nm thin-film VCSEL structures, including the highly n-doped GaAs ohmic and lattice-matched InGaP etch-stop layers, are epitaxially grown via a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) system. The electrical and optical properties of the substrate-removal thin-film VCSELs are investigated under CW operation, compared to those of the bulk-type VCSELs onto the n-GaAs substrates. The differential series resistance (85.92 Ω) of the thin-film VCSEL is 9.16% lower than 94.59 Ω of the bulk-type VCSEL onto the n-GaAs substrates. The thermal resistance (607 K W−1) of the thin-film VCSEL is 46.33% lower than 1131 K W−1 of the bulk-type VCSEL, by which the maximum peak power (11.70 mW) of the thin-film VCSEL at 24 mA is 12.07% higher than 10.44 mW of the bulk-type VCSEL at 22.40 mA under room temperature (25 °C).
ISSN
2196-7350
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/33433
DOI
https://doi.org/10.1002/admi.202300191
Fulltext

Type
Article
Funding
This work was supported by the Technology Innovation Program funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) (20020830). This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (NRF\u20102021R1A4A1033155). This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF\u20102020R1A2C2010342). This work was also supported by the GRRC Program of Gyeonggi Province (GRRCAJOU2022B01, Smart acne homecare device development). This work was also supported by the Ajou University fund.
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