We report on the facile synthesis of alloyed CdS x Se1-x quantum dots (QDs) via a one-pot method using the simultaneous injection of Se and S source into a solution of the Cd precursor dissolved in a coordinating mixture of hexadecylamine and trioctylphosphine, during which the formation of CdS x Se1-x nanocrystals was controlled by growth time at a temperature of 260 C. In particular, the emission peak and full width at half maximum of the photoluminescence (PL) of alloyed CdS x Se1-x QDs were tunable in the range of 588-604 nm and 36-38 nm, respectively, with a PL quantum yield of up to 55% by a reaction time of 60 min. Importantly, the structural advantage of alloyed CdS x Se1-x QDs-based light emitting devices have been fabricated and their electroluminescence properties characterized. A good performance device with a maximum luminance and luminous efficiency of 761 cd m-2 and 0.82 cd A-1, respectively, was obtained.
We acknowledge financial support from the Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant No. 103.03-2020.09. S L acknowledges support by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy (MOTIE), Republic of Korea (No. 20164030201380), and by the GRRC program of Gyeonggi province (GRRC-AJOU2016B03, Photonics Medical Convergence Technology Research Center).
