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Showing results 1 to 4 of 4

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Oh, Young Taek;
  • Ma, Jiyeon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-01-01
  • Japanese Journal of Applied Physics, Vol.60 No.1
  • IOP Publishing Ltd
Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5 No.6
  • Blackwell Publishing Ltd
Interface trap-induced temperature dependent hysteresis and mobility in β-Ga2O3 field-effect transistorsoa mark
  • 2021-02-01
  • Nanomaterials, Vol.11 No.2, pp.1-10
  • MDPI AG
Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor
  • Ahn, Jungho;
  • Ma, Jiyeon;
  • Lee, Doeon;
  • Lin, Qiubao;
  • Park, Youngseo;
  • Lee, Oukjae;
  • Sim, Sangwan;
  • Lee, Kyusang;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-02-17
  • ACS Photonics, Vol.8 No.2, pp.557-566
  • American Chemical Society
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