Ajou University repository

IEEE Transactions on Electron Devices
ISSN
  • E1557-9646
  • P0018-9383
Publisher

Institute of Electrical and Electronics Engineers

Listed on
(Coverage)

JCR1997-2023

SJR1999-2020;2022-2023

CiteScore2011-2023

SCI2010-2019

SCIE2010-2024

CC2016-2024

SCOPUS2017-2024

Active
Active

based on the information

  • SCOPUS:2024-10
Country
USA
Aime & Scopes
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
Article List

Showing results 1 to 3 of 3

Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
et al
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71 No.11, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
  • Zhang, Lingwei;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71 No.12, pp.7398-7404
  • Institute of Electrical and Electronics Engineers Inc.
Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68 No.3, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
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