Aerosol Deposited GaN: A Self-Improving Catalyst for Electrolytic Hydrogen Evolution Reaction

Abstract

In this study, gallium nitride (GaN), a stable and conductive III-V semiconductor, was explored as an alternate electrocatalyst for the hydrogen evolution reaction (HER). Using the aerosol deposition (AD) method, GaN nanoparticles were uniformly deposited onto carbon paper, providing an efficient and scalable approach to electrode fabrication. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of a thin gallium oxynitride layer resulting from partial oxygen substitution at nitrogen sites. This oxynitride layer alters the material’s electronic structure, enhancing conductivity, creating synergistic active sites, and reducing reaction barriers, which promote efficient electron transfer during water splitting. Our findings demonstrate the potential of GaN as a cost-effective, high-performance electrocatalyst for hydrogen production, with excellent stability and catalytic activity under acidic conditions.