Citation Export
DC Field | Value | Language |
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dc.contributor.author | Chang, Yang | - |
dc.contributor.author | Liu, Guangzhu | - |
dc.contributor.author | Ullah, Inam | - |
dc.contributor.author | Shan, Gaoyang | - |
dc.contributor.author | Wen, Xiaoqing | - |
dc.contributor.author | Yan, Aibin | - |
dc.date.issued | 2024-01-01 | - |
dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/37132 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85204795083&origin=inward | - |
dc.description.abstract | This paper proposes a novel radiation-hardened high-reliability SRAM cell, namely SHRCO, with 12 transistors for robust value storage as well as 6 transistors for parallel access operations. Using separated and error-interceptive feedback paths, the proposed cell has a complete self-recoverability from single-node upset (SNUs) at all single nodes and an excellent self-recoverability from double-node upsets (DNUs) at a part of node pairs. In addition, the proposed cell has superior access operation speed due to the inclusion of extra parallel access transistors. Simulation results show that the proposed cell has the largest number of node pairs that can self-recover from DNUs. Moreover, compared to the existing radiation-hardened SRAM cells, the proposed cell saves 28% of read time and 3% of write time on average. | - |
dc.language.iso | eng | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.subject.mesh | Circuit reliability | - |
dc.subject.mesh | Double-nodeupset | - |
dc.subject.mesh | High costs | - |
dc.subject.mesh | High reliability | - |
dc.subject.mesh | Node pairs | - |
dc.subject.mesh | Radiation-hardened | - |
dc.subject.mesh | Recoverability | - |
dc.subject.mesh | Self-recovery | - |
dc.subject.mesh | Soft error | - |
dc.subject.mesh | SRAM Cell | - |
dc.title | SHRCO: Design of an SRAM with High Reliability and Cost Optimization for Safety-Critical Applications | - |
dc.type | Conference | - |
dc.citation.conferenceDate | 2024.8.18. ~ 2024.8.20. | - |
dc.citation.conferenceName | 8th IEEE International Test Conference in Asia, ITC-Asia 2024 | - |
dc.citation.edition | Proceedings - ITC-Asia 2024: 8th IEEE International Test Conference in Asia | - |
dc.citation.title | Proceedings - ITC-Asia 2024: 8th IEEE International Test Conference in Asia | - |
dc.identifier.bibliographicCitation | Proceedings - ITC-Asia 2024: 8th IEEE International Test Conference in Asia | - |
dc.identifier.doi | 10.1109/itc-asia62534.2024.10661340 | - |
dc.identifier.scopusid | 2-s2.0-85204795083 | - |
dc.identifier.url | http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10661305 | - |
dc.subject.keyword | circuit reliability | - |
dc.subject.keyword | double-nodeupset | - |
dc.subject.keyword | self-recovery | - |
dc.subject.keyword | soft error | - |
dc.subject.keyword | SRAM | - |
dc.type.other | Conference Paper | - |
dc.description.isoa | false | - |
dc.subject.subarea | Computer Vision and Pattern Recognition | - |
dc.subject.subarea | Hardware and Architecture | - |
dc.subject.subarea | Information Systems and Management | - |
dc.subject.subarea | Electrical and Electronic Engineering | - |
dc.subject.subarea | Safety, Risk, Reliability and Quality | - |
dc.subject.subarea | Instrumentation | - |
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