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Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review
  • Kim, Se Eun ;
  • Sung, Ju Young ;
  • Yun, Yewon ;
  • Jeon, Byeongjun ;
  • Moon, Sang Mo ;
  • Lee, Han Bin ;
  • Lee, Chae Hyun ;
  • Jung, Hae Jun ;
  • Lee, Jae Ung ;
  • Lee, Sang Woon
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dc.contributor.authorKim, Se Eun-
dc.contributor.authorSung, Ju Young-
dc.contributor.authorYun, Yewon-
dc.contributor.authorJeon, Byeongjun-
dc.contributor.authorMoon, Sang Mo-
dc.contributor.authorLee, Han Bin-
dc.contributor.authorLee, Chae Hyun-
dc.contributor.authorJung, Hae Jun-
dc.contributor.authorLee, Jae Ung-
dc.contributor.authorLee, Sang Woon-
dc.date.issued2024-08-01-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://aurora.ajou.ac.kr/handle/2018.oak/34199-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85192796837&origin=inward-
dc.description.abstractDynamic random-access memories (DRAMs) are used as core memories in current computing methods based on the Von Neumann architecture. The DRAM demand continuously increases because of the increased amount of data and need for artificial intelligence computing. DRAM consists of one transistor and one capacitor. Data are stored in the capacitor representing “0” and “1”. DRAM capacitors are composed of metal–insulator–metal thin films. In this review, we summarize experimental methods for development of high-k insulators and metal thin films for DRAM capacitors using the atomic layer deposition (ALD) process. Future research directions for the development of high-k and metal thin films and their ALD processes are addressed for next-generation DRAMs.-
dc.description.sponsorshipThis study was supported by the National Research Foundation of Korea funded by the Ministry of Science, ICT (RS-2023-00258557), Technology Innovation Program (RS-2023-00237002, RS-2023-00234833) funded by the Ministry of Trade, Industry, and Energy (Korea), and Ajou University research fund.-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.subject.meshAtomic-layer deposition-
dc.subject.meshComputing methods-
dc.subject.meshCurrent computing-
dc.subject.meshDeposition process-
dc.subject.meshDynamic random access memory-
dc.subject.meshDynamic random-access memory capacitor-
dc.subject.meshHigh- k-
dc.subject.meshMetal thin film-
dc.subject.meshPerformance dynamics-
dc.subject.meshThin-films-
dc.titleAtomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review-
dc.typeArticle-
dc.citation.endPage15-
dc.citation.startPage8-
dc.citation.titleCurrent Applied Physics-
dc.citation.volume64-
dc.identifier.bibliographicCitationCurrent Applied Physics, Vol.64, pp.8-15-
dc.identifier.doi10.1016/j.cap.2024.05.011-
dc.identifier.scopusid2-s2.0-85192796837-
dc.identifier.urlhttps://www.sciencedirect.com/science/journal/15671739-
dc.subject.keywordAtomic layer deposition-
dc.subject.keywordDRAM capacitor-
dc.subject.keywordHigh-k-
dc.subject.keywordMetal-
dc.subject.keywordThin film-
dc.type.otherReview-
dc.description.isoafalse-
dc.subject.subareaMaterials Science (all)-
dc.subject.subareaPhysics and Astronomy (all)-
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