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DC Field | Value | Language |
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dc.contributor.author | Lee, Wanggon | - |
dc.contributor.author | Iqbal, Shahid | - |
dc.contributor.author | Kim, Jisu | - |
dc.contributor.author | Lee, Sangmin | - |
dc.contributor.author | Lee, Jinchan | - |
dc.contributor.author | Kumar, Mohit | - |
dc.contributor.author | Seo, Hyungtak | - |
dc.date.issued | 2023-12-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/33600 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85168409244&origin=inward | - |
dc.description.abstract | Vanadium dioxide (VO2) is a representative metal–insulator-transition (MIT) material that undergoes a reversible phase transition at 68 °C, which is close to room temperature. This shows the bias-triggered volatile resistance changes driven by MIT so that many studies have been made to implant VO2 as selectors for solving the sneak current problem of resistive random-access memory (ReRAM). However, the non-volatile switching of VO2 for non-volatile memory (NVM) application has not been demonstrated yet but if realized, this is truly breakthrough for low power and ultrafast NVM application. Herein, we report a successful formation of multiphase vanadium oxide on Si wafer via atomic layer deposition followed by a post-deposition annealing (PDA) process and demonstrate its applicability as a NVM device. It was confirmed that the multiphase vanadium oxide has MIT-driven abrupt resistance switching (i.e., low- and high-resistance state) at ± 1.6 V due to increased oxygen vacancies responsible for non-volatile memory property. The alternating current (AC) endurance upto 30,000 cycles and charge retention upto 3,000 sec are achieved at 2ⅹ102 of LRS/HRS current ratio. As a result, it opens the possibility of application to next-generation memory devices by reliable non-volatile MIT switching scheme. | - |
dc.description.sponsorship | This study was supported through the National Research Foundation of Korea [ NRF-2019R1A2C2003804 and NRF-2022M3I7A3037878 ] of the Ministry of Science and ICT, Republic of Korea. | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.subject.mesh | Atomic layer deposition | - |
dc.subject.mesh | Atomic-layer deposition | - |
dc.subject.mesh | Metal-to-insulator transition | - |
dc.subject.mesh | Metal-to-insulator transitions | - |
dc.subject.mesh | Multiphases | - |
dc.subject.mesh | Non-volatile memory | - |
dc.subject.mesh | Non-volatile-memory applications | - |
dc.subject.mesh | Nonvolatile | - |
dc.subject.mesh | Vanadium oxide thin films | - |
dc.subject.mesh | VO 2 thin films | - |
dc.title | Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices | - |
dc.type | Article | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 639 | - |
dc.identifier.bibliographicCitation | Applied Surface Science, Vol.639 | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.158240 | - |
dc.identifier.scopusid | 2-s2.0-85168409244 | - |
dc.identifier.url | http://www.journals.elsevier.com/applied-surface-science/ | - |
dc.subject.keyword | Atomic layer deposition (ALD) | - |
dc.subject.keyword | Metal-to-insulator transition (MIT) | - |
dc.subject.keyword | Non-volatile Memory | - |
dc.subject.keyword | VO2 thin film | - |
dc.type.other | Article | - |
dc.description.isoa | false | - |
dc.subject.subarea | Condensed Matter Physics | - |
dc.subject.subarea | Surfaces and Interfaces | - |
dc.subject.subarea | Surfaces, Coatings and Films | - |
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