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Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
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dc.contributor.authorLee, Wanggon-
dc.contributor.authorIqbal, Shahid-
dc.contributor.authorKim, Jisu-
dc.contributor.authorLee, Sangmin-
dc.contributor.authorLee, Jinchan-
dc.contributor.authorKumar, Mohit-
dc.contributor.authorSeo, Hyungtak-
dc.date.issued2023-12-01-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://aurora.ajou.ac.kr/handle/2018.oak/33600-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85168409244&origin=inward-
dc.description.abstractVanadium dioxide (VO2) is a representative metal–insulator-transition (MIT) material that undergoes a reversible phase transition at 68 °C, which is close to room temperature. This shows the bias-triggered volatile resistance changes driven by MIT so that many studies have been made to implant VO2 as selectors for solving the sneak current problem of resistive random-access memory (ReRAM). However, the non-volatile switching of VO2 for non-volatile memory (NVM) application has not been demonstrated yet but if realized, this is truly breakthrough for low power and ultrafast NVM application. Herein, we report a successful formation of multiphase vanadium oxide on Si wafer via atomic layer deposition followed by a post-deposition annealing (PDA) process and demonstrate its applicability as a NVM device. It was confirmed that the multiphase vanadium oxide has MIT-driven abrupt resistance switching (i.e., low- and high-resistance state) at ± 1.6 V due to increased oxygen vacancies responsible for non-volatile memory property. The alternating current (AC) endurance upto 30,000 cycles and charge retention upto 3,000 sec are achieved at 2ⅹ102 of LRS/HRS current ratio. As a result, it opens the possibility of application to next-generation memory devices by reliable non-volatile MIT switching scheme.-
dc.description.sponsorshipThis study was supported through the National Research Foundation of Korea [ NRF-2019R1A2C2003804 and NRF-2022M3I7A3037878 ] of the Ministry of Science and ICT, Republic of Korea.-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.subject.meshAtomic layer deposition-
dc.subject.meshAtomic-layer deposition-
dc.subject.meshMetal-to-insulator transition-
dc.subject.meshMetal-to-insulator transitions-
dc.subject.meshMultiphases-
dc.subject.meshNon-volatile memory-
dc.subject.meshNon-volatile-memory applications-
dc.subject.meshNonvolatile-
dc.subject.meshVanadium oxide thin films-
dc.subject.meshVO 2 thin films-
dc.titleVanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices-
dc.typeArticle-
dc.citation.titleApplied Surface Science-
dc.citation.volume639-
dc.identifier.bibliographicCitationApplied Surface Science, Vol.639-
dc.identifier.doi10.1016/j.apsusc.2023.158240-
dc.identifier.scopusid2-s2.0-85168409244-
dc.identifier.urlhttp://www.journals.elsevier.com/applied-surface-science/-
dc.subject.keywordAtomic layer deposition (ALD)-
dc.subject.keywordMetal-to-insulator transition (MIT)-
dc.subject.keywordNon-volatile Memory-
dc.subject.keywordVO2 thin film-
dc.type.otherArticle-
dc.description.isoafalse-
dc.subject.subareaCondensed Matter Physics-
dc.subject.subareaSurfaces and Interfaces-
dc.subject.subareaSurfaces, Coatings and Films-
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KUMARMOHITKumar, Mohit
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