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DC Field | Value | Language |
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dc.contributor.author | Ma, Jiyeon | - |
dc.contributor.author | Cho, Hyung Jun | - |
dc.contributor.author | Heo, Junseok | - |
dc.contributor.author | Kim, Sunkook | - |
dc.contributor.author | Yoo, Geonwook | - |
dc.date.issued | 2019-06-01 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/30658 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063728759&origin=inward | - |
dc.description.abstract | The ultra-wide bandgap and cost-effective melt-growth of β-Ga2O3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double-gate (ADG) β-Ga2O3 nanomembrane field-effect transistor (FET) comprised of a bottom-gate (BG) metal-oxide field-effect transistor and a top-gate (TG) metal-semiconductor field-effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top-gate β-Ga2O3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off-state breakdown measurement. These properties are further enhanced by double-gate operation, and superior device performance is demonstrated; positive-shifted threshold voltage and reduced subthreshold slope enable the asymmetric double-gate β-Ga2O3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high-frequency operation. These results show the great potential of asymmetric double-gate β-Ga2O3 FETs for energy-efficient high-voltage and -frequency devices with optimal material and structure co-designs. | - |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (Grant NRF-2017R1C1B5017470). | - |
dc.language.iso | eng | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.subject.mesh | Asymmetric gates | - |
dc.subject.mesh | Electrical performance | - |
dc.subject.mesh | Gallium oxides | - |
dc.subject.mesh | High frequency operation | - |
dc.subject.mesh | Metal oxide field effect transistors | - |
dc.subject.mesh | Schottky Barrier Diode(SBD) | - |
dc.subject.mesh | Schottky contact properties | - |
dc.subject.mesh | Wide band-gap material | - |
dc.title | Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices | - |
dc.type | Article | - |
dc.citation.number | 6 | - |
dc.citation.title | Advanced Electronic Materials | - |
dc.citation.volume | 5 | - |
dc.identifier.bibliographicCitation | Advanced Electronic Materials, Vol.5 No.6 | - |
dc.identifier.doi | 2-s2.0-85063728759 | - |
dc.identifier.scopusid | 2-s2.0-85063728759 | - |
dc.subject.keyword | asymmetric-gate | - |
dc.subject.keyword | beta-gallium oxide | - |
dc.subject.keyword | metal-oxide field-effect transistor | - |
dc.subject.keyword | metal-semiconductor field-effect transistor | - |
dc.type.other | Article | - |
dc.description.isoa | false | - |
dc.subject.subarea | Electronic, Optical and Magnetic Materials | - |
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