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Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon ;
  • Cho, Hyung Jun ;
  • Heo, Junseok ;
  • Kim, Sunkook ;
  • Yoo, Geonwook
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dc.contributor.authorMa, Jiyeon-
dc.contributor.authorCho, Hyung Jun-
dc.contributor.authorHeo, Junseok-
dc.contributor.authorKim, Sunkook-
dc.contributor.authorYoo, Geonwook-
dc.date.issued2019-06-01-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://aurora.ajou.ac.kr/handle/2018.oak/30658-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063728759&origin=inward-
dc.description.abstractThe ultra-wide bandgap and cost-effective melt-growth of β-Ga2O3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double-gate (ADG) β-Ga2O3 nanomembrane field-effect transistor (FET) comprised of a bottom-gate (BG) metal-oxide field-effect transistor and a top-gate (TG) metal-semiconductor field-effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top-gate β-Ga2O3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off-state breakdown measurement. These properties are further enhanced by double-gate operation, and superior device performance is demonstrated; positive-shifted threshold voltage and reduced subthreshold slope enable the asymmetric double-gate β-Ga2O3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high-frequency operation. These results show the great potential of asymmetric double-gate β-Ga2O3 FETs for energy-efficient high-voltage and -frequency devices with optimal material and structure co-designs.-
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (Grant NRF-2017R1C1B5017470).-
dc.language.isoeng-
dc.publisherBlackwell Publishing Ltd-
dc.subject.meshAsymmetric gates-
dc.subject.meshElectrical performance-
dc.subject.meshGallium oxides-
dc.subject.meshHigh frequency operation-
dc.subject.meshMetal oxide field effect transistors-
dc.subject.meshSchottky Barrier Diode(SBD)-
dc.subject.meshSchottky contact properties-
dc.subject.meshWide band-gap material-
dc.titleAsymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices-
dc.typeArticle-
dc.citation.number6-
dc.citation.titleAdvanced Electronic Materials-
dc.citation.volume5-
dc.identifier.bibliographicCitationAdvanced Electronic Materials, Vol.5 No.6-
dc.identifier.doi2-s2.0-85063728759-
dc.identifier.scopusid2-s2.0-85063728759-
dc.subject.keywordasymmetric-gate-
dc.subject.keywordbeta-gallium oxide-
dc.subject.keywordmetal-oxide field-effect transistor-
dc.subject.keywordmetal-semiconductor field-effect transistor-
dc.type.otherArticle-
dc.description.isoafalse-
dc.subject.subareaElectronic, Optical and Magnetic Materials-
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