Citation Export
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Y. C. | - |
| dc.contributor.author | Son, B. H. | - |
| dc.contributor.author | Jeong, H. Y. | - |
| dc.contributor.author | Park, K. H. | - |
| dc.contributor.author | Ahn, Y. H. | - |
| dc.date.issued | 2019-04-01 | - |
| dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/30539 | - |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85059690167&origin=inward | - |
| dc.description.abstract | The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average. | - |
| dc.description.sponsorship | This work was supported by the Midcareer Researcher Program ( 2017R1A2B4009177 ) through a National Research Foundation grant funded by Korea Government ( MSIP ) and by Human Resources Program in Energy Technology ( 20164030201380 ) of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ) grant funded by Korea Government ( MOTIE ). The research at Korea Advanced Nano Fab Center was supported by Nano∙Material Technology Development Program through the National Research Foundation of Korea funded by Ministry of Science, ICT and Future Planning ( 2015M3A7B7044548 ). | - |
| dc.language.iso | eng | - |
| dc.publisher | Elsevier B.V. | - |
| dc.subject.mesh | AlGaN/GaN high electron mobility transistors | - |
| dc.subject.mesh | Conduction channel | - |
| dc.subject.mesh | Electron transport | - |
| dc.subject.mesh | Flat-band voltage | - |
| dc.subject.mesh | Scanning photocurrent microscopies | - |
| dc.subject.mesh | SPCM | - |
| dc.subject.mesh | Switching behaviors | - |
| dc.subject.mesh | UV and visible light | - |
| dc.title | Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy | - |
| dc.type | Article | - |
| dc.citation.endPage | 410 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 406 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 19 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, Vol.19 No.4, pp.406-410 | - |
| dc.identifier.doi | 10.1016/j.cap.2019.01.008 | - |
| dc.identifier.scopusid | 2-s2.0-85059690167 | - |
| dc.identifier.url | http://www.elsevier.com/ | - |
| dc.subject.keyword | 2DEG | - |
| dc.subject.keyword | GaN | - |
| dc.subject.keyword | HEMT | - |
| dc.subject.keyword | SPCM | - |
| dc.type.other | Article | - |
| dc.identifier.pissn | 15671739 | - |
| dc.description.isoa | false | - |
| dc.subject.subarea | Materials Science (all) | - |
| dc.subject.subarea | Physics and Astronomy (all) | - |
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