Citation Export
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Bum Jun | - |
| dc.contributor.author | Jeong, Byung Joo | - |
| dc.contributor.author | Oh, Seungbae | - |
| dc.contributor.author | Chae, Sudong | - |
| dc.contributor.author | Choi, Kyung Hwan | - |
| dc.contributor.author | Nasir, Tuqeer | - |
| dc.contributor.author | Lee, Sang Hoon | - |
| dc.contributor.author | Kim, Kwan Woo | - |
| dc.contributor.author | Lim, Hyung Kyu | - |
| dc.contributor.author | Choi, Ik Jun | - |
| dc.contributor.author | Chi, Linlin | - |
| dc.contributor.author | Hyun, Sang Hwa | - |
| dc.contributor.author | Yu, Hak Ki | - |
| dc.contributor.author | Lee, Jae Hyun | - |
| dc.contributor.author | Choi, Jae Young | - |
| dc.date.issued | 2018-01-01 | - |
| dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/30475 | - |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85056904796&origin=inward | - |
| dc.description.abstract | A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices. | - |
| dc.description.sponsorship | This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program, 10063400, Development of Growth and Transfer Technology for Defectless 350 ⨯ 350 mm2 Single Crystalline Graphene) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). J. H. Lee acknowledges support from the Presidential Postdoctoral Fellowship Program of the NRF in Korea (2014R1A6A3A04058169). | - |
| dc.language.iso | eng | - |
| dc.publisher | Royal Society of Chemistry | - |
| dc.subject.mesh | Electrical characterization | - |
| dc.subject.mesh | Mechanical exfoliation | - |
| dc.subject.mesh | Nanoelectronic devices | - |
| dc.subject.mesh | P type semiconductor | - |
| dc.subject.mesh | Scanning Kelvin probe microscopy | - |
| dc.subject.mesh | Two-dimensional layered structures | - |
| dc.subject.mesh | Van Der Waals interactions | - |
| dc.subject.mesh | Vapor-transport reaction | - |
| dc.title | Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal | - |
| dc.type | Article | - |
| dc.citation.endPage | 37728 | - |
| dc.citation.number | 66 | - |
| dc.citation.startPage | 37724 | - |
| dc.citation.title | RSC Advances | - |
| dc.citation.volume | 8 | - |
| dc.identifier.bibliographicCitation | RSC Advances, Vol.8 No.66, pp.37724-37728 | - |
| dc.identifier.doi | 10.1039/c8ra07437b | - |
| dc.identifier.scopusid | 2-s2.0-85056904796 | - |
| dc.identifier.url | http://pubs.rsc.org/en/journals/journal/ra | - |
| dc.type.other | Article | - |
| dc.identifier.pissn | 20462069 | - |
| dc.description.isoa | true | - |
| dc.subject.subarea | Chemistry (all) | - |
| dc.subject.subarea | Chemical Engineering (all) | - |
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