Citation Export
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chae, Kwanbyung | - |
| dc.contributor.author | Cuong, Nguyen Duc | - |
| dc.contributor.author | Ryu, Shinyoung | - |
| dc.contributor.author | Yeom, Dong Il | - |
| dc.contributor.author | Ahn, Y. H. | - |
| dc.contributor.author | Lee, Soonil | - |
| dc.contributor.author | Park, Ji Yong | - |
| dc.date.issued | 2018-05-01 | - |
| dc.identifier.uri | https://aurora.ajou.ac.kr/handle/2018.oak/30112 | - |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85042730955&origin=inward | - |
| dc.description.abstract | Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated. | - |
| dc.description.sponsorship | This work was supported by “ Human Resources Program in Energy Technology ” of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ), granted financial resource from the Ministry of Trade, Industry and Energy (No. 20164030201380 ), Basic Science Research Program ( NRF-2015R1D1A1A01057417 ) through the National Research Foundation of Korea ( NRF ) funded by the Ministry of Education of the Republic of Korea , and by the Ajou University research fund. | - |
| dc.language.iso | eng | - |
| dc.publisher | Elsevier B.V. | - |
| dc.subject.mesh | Electrical characteristic | - |
| dc.subject.mesh | Flexible device | - |
| dc.subject.mesh | Flexible electronic devices | - |
| dc.subject.mesh | Function of frequency | - |
| dc.subject.mesh | Gate stacks | - |
| dc.subject.mesh | Ion gels | - |
| dc.subject.mesh | Poly(vinylidene fluoride-co-hexafluoropropylene) | - |
| dc.subject.mesh | Simple circuits | - |
| dc.title | Electrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices | - |
| dc.type | Article | - |
| dc.citation.endPage | 504 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 500 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 18 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, Vol.18 No.5, pp.500-504 | - |
| dc.identifier.doi | 10.1016/j.cap.2018.02.017 | - |
| dc.identifier.scopusid | 2-s2.0-85042730955 | - |
| dc.identifier.url | http://www.elsevier.com/ | - |
| dc.subject.keyword | Field effect transistor | - |
| dc.subject.keyword | Flexible device | - |
| dc.subject.keyword | Ion gel | - |
| dc.subject.keyword | Ion liquid | - |
| dc.subject.keyword | Polymer | - |
| dc.type.other | Article | - |
| dc.identifier.pissn | 15671739 | - |
| dc.description.isoa | false | - |
| dc.subject.subarea | Materials Science (all) | - |
| dc.subject.subarea | Physics and Astronomy (all) | - |
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