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Ultra large-dynamic range IGZO neuromorphic transistors via photo-cross linked organic polymer dielectrics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 박성준 | - |
| dc.contributor.author | 곽태현 | - |
| dc.date.accessioned | 2025-01-25T01:35:53Z | - |
| dc.date.available | 2025-01-25T01:35:53Z | - |
| dc.date.issued | 2023-02 | - |
| dc.identifier.other | 32617 | - |
| dc.identifier.uri | https://dspace.ajou.ac.kr/handle/2018.oak/24332 | - |
| dc.description | 학위논문(석사)--아주대학교 일반대학원 :전자공학과,2023. 2 | - |
| dc.description.tableofcontents | Introduction 1 <br> Solution processed dielectric based neuromorphic 1 <br>Results 5 <br> Polymer film characteristic 5 <br> Film electrical characteristic 6 <br> Polymer and thin film transistors electrical characteristic 8 <br> Device schematic and neuromorphic behaivor 9 <br> Cycle test and simulation 10 <br>Conclustion 12 <br>Experimental section 13 <br> Materials 13 <br> NB and VNB Vinyl Addition Copolymerization 13 <br> Preparation of the Cross-linked P(NB/VNB) Film 13 <br> Fabrication of Device 14 <br>Reference 51 | - |
| dc.language.iso | kor | - |
| dc.publisher | The Graduate School, Ajou University | - |
| dc.rights | 아주대학교 논문은 저작권에 의해 보호받습니다. | - |
| dc.title | Ultra large-dynamic range IGZO neuromorphic transistors via photo-cross linked organic polymer dielectrics | - |
| dc.title.alternative | 광가교 고분자 절연체를 이용한 높은 동적 범위의 뉴로모픽 소자 | - |
| dc.type | Thesis | - |
| dc.contributor.affiliation | 아주대학교 대학원 | - |
| dc.contributor.alternativeName | Taehyun Kwak | - |
| dc.contributor.department | 일반대학원 전자공학과 | - |
| dc.date.awarded | 2023-02 | - |
| dc.description.degree | Master | - |
| dc.identifier.localId | T000000032617 | - |
| dc.identifier.url | https://dcoll.ajou.ac.kr/dcollection/common/orgView/000000032617 | - |
| dc.subject.keyword | Neuromorhic device | - |
| dc.subject.keyword | Polymer dielectric | - |
| dc.subject.keyword | Solution process | - |
| dc.description.alternativeAbstract | Because of its improved recognition and learning abilities in computing of neural network, three-terminal neuromorphic transistors have received a lot of attention. High-Synaptic weight (G) (i.e., conductance) and a broad weight update margin (i.e., dynamic range (DR)) are required for effective and speedy processing of parallel architecture and unorganized data. This research uses poly(norbornene-co-5-vinyl-2-norbornene), a cross-linked vinyl-added polynorbornene copolymer dielectric layer based on thiol-ene photoclick chemistry, to create a neuromorphic transistor with a high synaptic weight and broad dynamic range. Indium gallium zinc oxide with polymer treatment. The click reaction of the ultraviolet photoinduced thiol-ene polar cross linker pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) generates free -OH groups in the insulator, activating the slow molecular depolarization effect on the IGZO semiconductor. An extensive and methodical research of the characteristics at the boundary between mating the cross-linked polymer insulator, IGZO channel showed impressive neuron behavior operation with a big channel conductance (~0.5 mS), wide dynamic range (~6200), and cycle operating stability at 104 successive pulses, resulting in accuracy of ~87% based on MNIST simulation. | - |
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- Graduate School of Ajou University > Department of Electronic Engineering > 3. Theses(Master)
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