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Showing results 1 to 10 of 11 (Search time: 0.0 seconds).

Formation of oxygen vacancy at surfaces of ZnO by trimethylaluminumoa mark
  • Eom, Hyobin;
  • Bae, Woojin;
  • Sung, Ju Young;
  • Choi, Ji Hyeon;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Park, Tae Joo;
  • Lee, Sang Woon;
  • Shong, Bonggeun
  • 2024-03-01
  • APL Materials, Vol.12
  • American Institute of Physics
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
  • 2018-01-31
  • Thin Solid Films, Vol.646, pp.173-179
  • Elsevier B.V.
Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer depositionoa mark
  • Park, Jeongwoo;
  • Eom, Hyobin;
  • Kim, Seong Hwan;
  • Seok, Tae Jun;
  • Park, Tae Joo;
  • Lee, Sang Woon;
  • Shong, Bonggeun
  • 2021-12-01
  • Materials Today Advances, Vol.12
  • Elsevier Ltd
Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition of Al2O3with a Series of Alcohol Oxidants
  • Seo, Seunggi;
  • Woo, Whang Je;
  • Lee, Yujin;
  • Yoon, Hwi;
  • Kim, Miso;
  • Oh, Il Kwon;
  • Chung, Seung Min;
  • Kim, Hyungjun;
  • Shong, Bonggeun
  • 2021-08-26
  • Journal of Physical Chemistry C, Vol.125, pp.18151-18160
  • American Chemical Society
Enhanced nucleation and growth of HfO2 thin films grown by atomic layer deposition on graphene
  • 2018-04-25
  • Journal of Alloys and Compounds, Vol.742, pp.676-682
  • Elsevier Ltd
In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al2O3/TiO2Thin-Film Heterostructureoa mark
  • Seok, Tae Jun;
  • Liu, Yuhang;
  • Choi, Ji Hyeon;
  • Kim, Hye Ju;
  • Kim, Dae Hyun;
  • Kim, Sung Min;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2020-09-22
  • Chemistry of Materials, Vol.32, pp.7662-7669
  • American Chemical Society
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