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Showing results 1 to 10 of 1070 (Search time: 0.0 seconds).

Effect of Residual Oxygen Concentration on the Lattice Parameters of Aluminum Nitride Powder Prepared via Carbothermal Reduction Nitridation Reactionoa mark
  • Kim, Jaegyeom;
  • Ahn, Heewon;
  • Kim, Seung Joo;
  • Kim, Jong Young;
  • Pee, Jae Hwan
  • 2022-12-01
  • Materials, Vol.15
  • MDPI
Alternative surface reaction route in the atomic layer deposition of NbN thin films for reduced resistivity
  • Lee, Hyeok Jae;
  • Jang, Seo Young;
  • Lee, Hye Min;
  • Sung, Ju Young;
  • Kim, Se Eun;
  • Jeon, Jae Deock;
  • Yun, Yewon;
  • Lee, Sang Woon
  • 2023-08-15
  • Journal of Alloys and Compounds, Vol.952
  • Elsevier Ltd
Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications
  • 2021-02-23
  • ACS Applied Electronic Materials, Vol.3, pp.999-1005
  • American Chemical Society
The role of hydrogen in the nitriding of anatase TiO 2 films in the N 2 -H 2 microwave afterglows
  • Ryu, Seol;
  • Wang, Yunfei;
  • Ricard, Andre;
  • Sarrette, Jean Philippe;
  • Kim, Ansoon;
  • Kim, Yu Kwon
  • 2019-04-25
  • Surface and Coatings Technology, Vol.364, pp.341-346
  • Elsevier B.V.
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applicationsoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Kim, Hyoung Gyun;
  • Hyun, Sang Hwa;
  • Choi, Jun Hui;
  • Hwang, Hyun Sik;
  • Kim, Eui Tae;
  • Park, Hyeong Gi;
  • Lee, Jae Hyun
  • 2023-02-08
  • ACS Applied Materials and Interfaces, Vol.15, pp.7274-7281
  • American Chemical Society
유기금속화합물 단일전구체를 이용한 Aluminum Nitride 박막증착
  • 경제홍
  • 2000
  • The Graduate School, Ajou University
Cobalt(VI)-oxo species-mediated selective oxidation of electron-rich organic contaminants by Co-loaded hydroxylated g-C3N4 with high resistance to an inhibitory effect of background constituents
  • 2024-10-01
  • Applied Surface Science, Vol.669
  • Elsevier B.V.
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