Ajou University repository

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Showing results 1 to 10 of 5707 (Search time: 0.0 seconds).

Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platformoa mark
  • Pyo, Ju Young;
  • Jeon, Jin Hyeok;
  • Koh, Yumin;
  • Cho, Chu young;
  • Park, Hyeong Ho;
  • Park, Kyung Ho;
  • Lee, Sang Woon;
  • Cho, Won Ju
  • 2018-08-01
  • AIP Advances, Vol.8
  • American Institute of Physics Inc.
그래핀 위의 촉매 금속 구조 게이트를 이용한 AlGaN/GaN MIS HEMT 기반 가스 센서
  • 김다희
  • 2021-08
  • The Graduate School, Ajou University
Analysis of thermal effects according to channel and drain contact metal distanceoa mark
  • 2025-01-01
  • Case Studies in Thermal Engineering, Vol.65
  • Elsevier Ltd
Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
  • Kim, Y. C.;
  • Son, B. H.;
  • Jeong, H. Y.;
  • Park, K. H.;
  • Ahn, Y. H.
  • 2019-04-01
  • Current Applied Physics, Vol.19, pp.406-410
  • Elsevier B.V.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
  • 2024-12-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.557-564
  • Institute of Electronics Engineers of Korea
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