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to 10 of 931 (Search time: 0.0 seconds).
Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
Kumar, Mohit
;
Han, Seung Ik;
Lim, Seok Won;
Seo, Hyungtak
2023-02-28
ACS Applied Electronic Materials, Vol.5, pp.896-904
American Chemical Society
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
Choi, Hyojun;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Kim, Do Hyung;
Oh, Il Kwon
;
Park, Sang Hee Ko;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Electron Device Letters, Vol.45, pp.2351-2354
Institute of Electrical and Electronics Engineers Inc.
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
Zhang, Lingwei;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Transactions on Electron Devices, Vol.71, pp.7398-7404
Institute of Electrical and Electronics Engineers Inc.
고 유전물질을 절연체 박막으로 적용한 금속-강유전체-절연체-금속 구조의 강유전체 터널링 접합 특성 분석
최문정
2022-02
The Graduate School, Ajou University
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
Kim, Giuk;
Choi, Hyojun;
Lee, Sangho;
Shin, Hunbeom;
Lee, Sangmok;
Nam, Yunseok;
Kang, Hyunjun;
Shin, Seokjoong;
Kim, Hoon;
Lim, Youngjin;
Kim, Kang;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
Institute of Electrical and Electronics Engineers Inc.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectric
oa mark
Yeom, Min Jae;
Yang, Jeong Yong;
Lee, Chan Ho;
Heo, Junseok
;
Chung, Roy Byung Kyu;
Yoo, Geonwook
2021-12-01
Micromachines, Vol.12
MDPI
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read after Write Delay Issue
Kim, Giuk;
Choi, Hyojun;
Cho, Hongrae;
Lee, Sangho;
Shin, Hunbeom;
Kang, Hyunjun;
Kim, Hoon;
Shin, Seokjoong;
Park, Seonjae;
Kwon, Sunseong;
Lim, Youngjin;
Kim, Kang;
Min Chung, Jong;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Electron Device Letters, Vol.45, pp.2359-2362
Institute of Electrical and Electronics Engineers Inc.
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Journal of Alloys and Compounds
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