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Showing results 1 to 10 of 931 (Search time: 0.0 seconds).

Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
  • Zhang, Lingwei;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.7398-7404
  • Institute of Electrical and Electronics Engineers Inc.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read after Write Delay Issue
  • Kim, Giuk;
  • Choi, Hyojun;
  • Cho, Hongrae;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Kang, Hyunjun;
  • Kim, Hoon;
  • Shin, Seokjoong;
  • Park, Seonjae;
  • Kwon, Sunseong;
  • Lim, Youngjin;
  • Kim, Kang;
  • Min Chung, Jong;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2359-2362
  • Institute of Electrical and Electronics Engineers Inc.
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