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Showing results 1 to 10 of 1030 (Search time: 0.0 seconds).

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
  • Zhang, Lingwei;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.7398-7404
  • Institute of Electrical and Electronics Engineers Inc.
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesoa mark
  • 2022-01-01
  • Journal of Asian Ceramic Societies, Vol.10, pp.649-659
  • Taylor and Francis Ltd.
Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
  • Lim, Han Jin;
  • Choi, Jae Hyoung;
  • Cho, Gihee;
  • Chang, Jaewan;
  • Kim, Younsoo;
  • Jung, Hyung Suk;
  • Shin, Kyoung Sub;
  • Seo, Hyungtak;
  • Jeon, Hyeongtag
  • 2023-10-24
  • Advanced Materials Technologies, Vol.8
  • John Wiley and Sons Inc
Atomic layer deposition of high-k and metal thin films for high-performance DRAM capacitors: A brief review
  • Kim, Se Eun;
  • Sung, Ju Young;
  • Yun, Yewon;
  • Jeon, Byeongjun;
  • Moon, Sang Mo;
  • Lee, Han Bin;
  • Lee, Chae Hyun;
  • Jung, Hae Jun;
  • Lee, Jae Ung;
  • Lee, Sang Woon
  • 2024-08-01
  • Current Applied Physics, Vol.64, pp.8-15
  • Elsevier B.V.
Analysis of Lifetime Estimation on the DC-Link Capacitor in Three-Level Hybrid ANPC Inverters Under Fault-Tolerance Control
  • 2022-05-01
  • Journal of Electrical Engineering and Technology, Vol.17, pp.1705-1714
  • Korean Institute of Electrical Engineers
Aluminum doping for optimization of ultrathin and high-k dielectric layer based on SrTiO3
  • 2020-04-01
  • Journal of Materials Science and Technology, Vol.42, pp.28-37
  • Chinese Society of Metals
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