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Showing results 1 to 10 of 2208 (Search time: 0.0 seconds).

Position-Selective Metal Oxide Nanostructures using Atomic Thin Carbon Layer for Hydrogen Gas Sensorsoa mark
  • 2020-11-01
  • Journal of Sensor Science and Technology, Vol.29, pp.369-373
  • Korean Sensors Society
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesoa mark
  • 2022-01-01
  • Journal of Asian Ceramic Societies, Vol.10, pp.649-659
  • Taylor and Francis Ltd.
Modulation of electrical properties in MoTe2 by XeF2-mediated surface oxidationoa mark
  • Ji, Eunji;
  • Kim, Jong Hun;
  • Lee, Wanggon;
  • Shin, June Chul;
  • Seo, Hyungtak;
  • Ihm, Kyuwook;
  • Park, Jin Woo;
  • Lee, Gwan Hyoung
  • 2022-02-21
  • Nanoscale Advances, Vol.4, pp.1191-1198
  • Royal Society of Chemistry
Micro-networked metal coating using self-cracked WO3 inorganic thin film as sacrificial layer: Application to transparent flexible electrodes
  • Kim, Noeul;
  • Kim, Youngho;
  • Park, Jung Been;
  • Cho, Hyeon Ho;
  • Lee, Dong kyu;
  • Kwak, Geonho;
  • Yu, Hak Ki
  • 2021-10-31
  • Thin Solid Films, Vol.736
  • Elsevier B.V.
Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
  • 2023-12-01
  • Applied Surface Science, Vol.639
  • Elsevier B.V.
Surface oxidation behavior of spark plasma sintered AlCrCuFeMnWx high entropy alloys at an elevated isothermal temperature
  • 2024-02-01
  • International Journal of Refractory Metals and Hard Materials, Vol.119
  • Elsevier Ltd
Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor
  • 2021-01-01
  • IEEE Electron Device Letters, Vol.42, pp.50-53
  • Institute of Electrical and Electronics Engineers Inc.
Selectively Self-Aligned Sol-Gel Copper Oxide for Large-Area Multi-Valued Logic Devices
  • Baek, Seokhyeon;
  • Kim, Wonsik;
  • Lee, Won June;
  • Choi, Jun Gyu;
  • Park, Sungjun
  • 2024-01-01
  • Small
  • John Wiley and Sons Inc
Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors
  • 2022-05-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
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