Ajou University repository

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Showing results 1 to 10 of 1469 (Search time: 0.0 seconds).

Creation of a two-dimensional conducting path based on the engineering oxidation state of WO 3 with Al 2 O 3 at the interface
  • Lee, Young Ahn;
  • Kim, Jinseo;
  • Lee, Sang Yeon;
  • Park, Jucheol;
  • Seo, Hyungtak
  • 2019-07-01
  • Applied Surface Science, Vol.481, pp.1011-1017
  • Elsevier B.V.
Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
  • Lim, Han Jin;
  • Choi, Jae Hyoung;
  • Cho, Gihee;
  • Chang, Jaewan;
  • Kim, Younsoo;
  • Jung, Hyung Suk;
  • Shin, Kyoung Sub;
  • Seo, Hyungtak;
  • Jeon, Hyeongtag
  • 2023-10-24
  • Advanced Materials Technologies, Vol.8
  • John Wiley and Sons Inc
Catalytic CH4 pyrolysis promoted by the interface of a molten metal–salt hybrid system
  • Seo, Jeong Cheol;
  • Park, Sunju;
  • Park, Gyeongah;
  • Lee, Yunjo;
  • Han, Seung Ju;
  • Kim, Seok Ki
  • 2023-07-01
  • Gas Science and Engineering, Vol.115
  • Elsevier B.V.
Strategic Approach for Frustrating Charge Recombination of Perovskite Solar Cells in Low-Intensity Indoor Light: Insertion of Polar Small Molecules at the Interface of the Electron Transport Layer
  • Shin, So Jeong;
  • Alosaimi, Ghaida;
  • Choi, Min Jun;
  • Ann, Myung Hyun;
  • Jeon, Gyeong G.;
  • Seidel, Jan;
  • Kim, Jincheol;
  • Yun, Jae Sung;
  • Kim, Jong H.
  • 2022-11-28
  • ACS Applied Energy Materials, Vol.5, pp.13234-13242
  • American Chemical Society
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesoa mark
  • 2022-01-01
  • Journal of Asian Ceramic Societies, Vol.10, pp.649-659
  • Taylor and Francis Ltd.
Strained BaTiO3 thin films via in-situ crystallization using atomic layer deposition on SrTiO3 substrate
  • Choi, Heung Yoon;
  • Jeon, Jae Deock;
  • Kim, Se Eun;
  • Jang, Seo Young;
  • Sung, Ju Young;
  • Lee, Sang Woon
  • 2023-06-15
  • Materials Science in Semiconductor Processing, Vol.160
  • Elsevier Ltd
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
  • 2018-01-31
  • Thin Solid Films, Vol.646, pp.173-179
  • Elsevier B.V.
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