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Showing results 1 to 10 of 5197 (Search time: 0.0 seconds).

Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
  • Lim, Han Jin;
  • Choi, Jae Hyoung;
  • Cho, Gihee;
  • Chang, Jaewan;
  • Kim, Younsoo;
  • Jung, Hyung Suk;
  • Shin, Kyoung Sub;
  • Seo, Hyungtak;
  • Jeon, Hyeongtag
  • 2023-10-24
  • Advanced Materials Technologies, Vol.8
  • John Wiley and Sons Inc
Bias-stress-stable sub-1.5V oxide thin-film transistors via synergistic composition of sol-gel quaternary high-k oxide dielectricsoa mark
  • Baek, Seokhyeon;
  • Choi, Jun Gyu;
  • Lee, Won June;
  • Kwak, Taehyun;
  • Jo, Yong Ryun;
  • Park, Sungjun
  • 2024-08-05
  • Journal of Alloys and Compounds, Vol.994
  • Elsevier Ltd
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesoa mark
  • 2022-01-01
  • Journal of Asian Ceramic Societies, Vol.10, pp.649-659
  • Taylor and Francis Ltd.
Design and Fabrication of Tapered Dielectric for Broadband and Wide Incident Angle Transmission
  • 2022-12-01
  • IEEE Transactions on Antennas and Propagation, Vol.70, pp.11922-11933
  • Institute of Electrical and Electronics Engineers Inc.
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
  • 2018-01-31
  • Thin Solid Films, Vol.646, pp.173-179
  • Elsevier B.V.
Aluminum doping for optimization of ultrathin and high-k dielectric layer based on SrTiO3
  • 2020-04-01
  • Journal of Materials Science and Technology, Vol.42, pp.28-37
  • Chinese Society of Metals
Broadband absorption enhancement of monolayer graphene by prism coupling in the visible rangeoa mark
  • 2019-12-01
  • Carbon, Vol.154, pp.42-47
  • Elsevier Ltd
Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition
  • Lee, Kunyoung;
  • Jang, Woochool;
  • Kim, Hyunjung;
  • Lim, Heewoo;
  • Kim, Bumsik;
  • Seo, Hyungtak;
  • Jeon, Hyeongtag
  • 2018-07-01
  • Thin Solid Films, Vol.657, pp.1-7
  • Elsevier B.V.
Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices
  • Oh, Il Kwon;
  • Khan, Asir Intisar;
  • Qin, Shengjun;
  • Lee, Yujin;
  • Wong, H. S.Philip;
  • Pop, Eric;
  • Bent, Stacey F.
  • 2023-09-13
  • ACS Applied Materials and Interfaces, Vol.15, pp.43087-43093
  • American Chemical Society
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