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to 3 of 3 (Search time: 0.0 seconds).
First Demonstration of Thermally Stable Zr:HfO2Ferroelectrics via Inserting AlN Interlayer
Lee, Sangmok;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Kim, Do Hyung;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Electron Device Letters, Vol.45, pp.1578-1581
Institute of Electrical and Electronics Engineers Inc.
Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
Zhang, Lingwei;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Transactions on Electron Devices, Vol.71, pp.7398-7404
Institute of Electrical and Electronics Engineers Inc.
1
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Author
Ahn, Jinho
2
Jeon, Sanghun
2
Kim, Giuk
2
Kim, Kang
2
Ko Park, Sang Hee
2
Lee, Sangho
2
Lim, Youngjin
2
Oh, Il-Kwon
2
Shin, Hunbeom
2
Kim, Do Hyung
1
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Type
Article
2
Keyword
3D integration
1
Al-doped HfO2
1
annealing
1
fast ramping fast cooling (FRFC)
1
ferroelectric
1
ferroelectric (FE)
1
hafnia
1
HfZrO
1
metal–FE–metal (MFM) capacitors
1
thermal budget
1
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Date issued
2020 - 2025
2
Journal
IEEE Electron Device Letters
1
IEEE Transactions on Electron Dev...
1