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Showing results 1 to 10 of 5421 (Search time: 0.0 seconds).

Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Junction Temperature Estimation of Direct-Drive GaN HEMTs in Two-Level Inverters for Driving PMSM Through Power Loss Analysis
  • 2024-05-01
  • Journal of Electrical Engineering and Technology, Vol.19, pp.2205-2216
  • Korean Institute of Electrical Engineers
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applicationsoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Kim, Hyoung Gyun;
  • Hyun, Sang Hwa;
  • Choi, Jun Hui;
  • Hwang, Hyun Sik;
  • Kim, Eui Tae;
  • Park, Hyeong Gi;
  • Lee, Jae Hyun
  • 2023-02-08
  • ACS Applied Materials and Interfaces, Vol.15, pp.7274-7281
  • American Chemical Society
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin-Film Transistors
  • Kim, Wonsik;
  • Lee, Won June;
  • Kwak, Taehyun;
  • Baek, Seokhyeon;
  • Lee, Seung Hoon;
  • Park, Sungjun
  • 2022-04-01
  • Advanced Materials Interfaces, Vol.9
  • John Wiley and Sons Inc
Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
  • 2019-06-01
  • Journal of the Korean Physical Society, Vol.74, pp.1171-1175
  • The Korean Physical Society
Reconsideration of the gallium nitride: Dual functionality as an electron transporter and transparent conductor for recyclable polymer solar cell substrate applications
  • Lee, Kwang Jae;
  • Yoon, Sang Eun;
  • Jeon, Gyeong G.;
  • Jung, Sung Hoon;
  • Jung, Tae Hoon;
  • Cho, Namchul;
  • Yun, Jae Sung;
  • Kim, Jincheol;
  • Ho-Baillie, Anita W.Y.;
  • Baek, Jong Hyeob;
  • Song, Myungkwan;
  • Kim, Jong H.
  • 2019-09-15
  • Solar Energy Materials and Solar Cells, Vol.200
  • Elsevier B.V.
Interface trap-induced temperature dependent hysteresis and mobility in β-Ga2O3 field-effect transistorsoa mark
  • 2021-02-01
  • Nanomaterials, Vol.11, pp.1-10
  • MDPI AG
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