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Showing results 1 to 10 of 22 (Search time: 0.0 seconds).

Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C4F8 Plasma
  • 2021-05-01
  • Korean Chemical Engineering Research, Vol.59, pp.254-259
  • Korean Institute of Chemical Engineers
Etching of Si-based materials using fluorocarbon plasmas : Etch characteristics and its applications
  • 김준현
  • 2019-02
  • The Graduate School, Ajou University
Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether
  • 2020-04-01
  • Applied Surface Science, Vol.508
  • Elsevier B.V.
과불화탄소와 불포화 불화탄소 플라즈마에서 증착된 불화탄소막의 특성
  • 권혁규
  • 2009-02
  • The Graduate School, Ajou University
Plasma etching of SiO2 using heptafluoropropyl methyl ether and perfluoropropyl vinyl ether
  • 2018-01-01
  • ECS Journal of Solid State Science and Technology, Vol.7, pp.Q218-Q221
  • Electrochemical Society Inc.
Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
  • 2018-01-01
  • Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.36
  • AVS Science and Technology Society
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
Heptafluoropropyl methyl ether를 이용한 SiO₂ 콘택홀 플라즈마 순환 식각
  • 이유종
  • 2023-02
  • The Graduate School, Ajou University
Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8oa mark
  • 2022-05-01
  • Coatings, Vol.12
  • MDPI
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