Ajou University repository

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Showing results 1 to 10 of 156 (Search time: 0.0 seconds).

Plasma atomic layer etching of molybdenum with surface fluorination
  • Kim, Yongjae;
  • Kang, Hojin;
  • Ha, Heeju;
  • Kim, Changkoo;
  • Cho, Sungmin;
  • Chae, Heeyeop
  • 2023-08-01
  • Applied Surface Science, Vol.627
  • Elsevier B.V.
Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether
  • 2020-04-01
  • Applied Surface Science, Vol.508
  • Elsevier B.V.
Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
  • 2018-01-01
  • Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.36
  • AVS Science and Technology Society
과불화탄소와 불포화 불화탄소 플라즈마에서 증착된 불화탄소막의 특성
  • 권혁규
  • 2009-02
  • The Graduate School, Ajou University
Plasma etching of SiO2 using heptafluoropropyl methyl ether and perfluoropropyl vinyl ether
  • 2018-01-01
  • ECS Journal of Solid State Science and Technology, Vol.7, pp.Q218-Q221
  • Electrochemical Society Inc.
Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8oa mark
  • 2022-05-01
  • Coatings, Vol.12
  • MDPI
Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2and Si3N4Films
  • Kim, Yongjae;
  • Kim, Seoeun;
  • Kang, Hojin;
  • You, Sanghyun;
  • Kim, Changkoo;
  • Chae, Heeyeop
  • 2022-08-15
  • ACS Sustainable Chemistry and Engineering, Vol.10, pp.10537-10546
  • American Chemical Society
Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C4F8 Plasma
  • 2021-05-01
  • Korean Chemical Engineering Research, Vol.59, pp.254-259
  • Korean Institute of Chemical Engineers
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