Ajou University repository

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Showing results 1 to 10 of 787 (Search time: 0.0 seconds).

Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C4F8 Plasma
  • 2021-05-01
  • Korean Chemical Engineering Research, Vol.59, pp.254-259
  • Korean Institute of Chemical Engineers
Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
Plasma etching of SiO2 using heptafluoropropyl methyl ether and perfluoropropyl vinyl ether
  • 2018-01-01
  • ECS Journal of Solid State Science and Technology, Vol.7, pp.Q218-Q221
  • Electrochemical Society Inc.
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
  • 2018-01-01
  • Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.36
  • AVS Science and Technology Society
Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8oa mark
  • 2022-05-01
  • Coatings, Vol.12
  • MDPI
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