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Showing results 1 to 10 of 931 (Search time: 0.0 seconds).

MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering
  • Ma, Rui;
  • Zhang, Huairuo;
  • Yoo, Youngdong;
  • Degregorio, Zachary Patrick;
  • Jin, Lun;
  • Golani, Prafful;
  • Ghasemi Azadani, Javad;
  • Low, Tony;
  • Johns, James E.;
  • Bendersky, Leonid A.;
  • Davydov, Albert V.;
  • Koester, Steven J.
  • 2019-07-23
  • ACS Nano, Vol.13, pp.8035-8046
  • American Chemical Society
Singular flat bandsoa mark
  • 2021-01-01
  • Advances in Physics: X, Vol.6
  • Taylor and Francis Ltd.
Flat bands with band crossings enforced by symmetry representationoa mark
  • 2021-08-15
  • Physical Review B, Vol.104
  • American Physical Society
Quasi-localization and Wannier obstruction in partially flat bandsoa mark
  • 2024-12-01
  • Communications Physics, Vol.7
  • Nature Research
General construction of flat bands with and without band crossings based on wave function singularityoa mark
  • 2021-08-15
  • Physical Review B, Vol.104
  • American Physical Society
Mode conversion and resonant absorption in inhomogeneous materials with flat bandsoa mark
  • 2022-01-15
  • Physical Review B, Vol.105
  • American Physical Society
Delocalization and re-entrant localization of flat-band states in non-Hermitian disordered lattice models with flat bandsoa mark
  • 2023-01-01
  • Progress of Theoretical and Experimental Physics, Vol.2023
  • Physical Society of Japan
Electronic control of ultrafast field emission in carbon nanotube gaps
  • 2019-10-14
  • Applied Physics Letters, Vol.115
  • American Institute of Physics Inc.
Geometric characterization of anomalous Landau levels of isolated flat bandsoa mark
  • 2021-12-01
  • Nature Communications, Vol.12
  • Nature Research
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