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Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
  • Lee, Suk Hyun;
  • Park, Han Sol;
  • Shin, Seong Jae;
  • Lee, In Soo;
  • Ryoo, Seung Kyu;
  • Byun, Seungyong;
  • Kim, Kyung Do;
  • Moon, Taehwan;
  • Hwang, Cheol Seong
  • 2024-12-01
  • Applied Physics Reviews, Vol.11
  • American Institute of Physics
Switchable Polar Nanotexture in Nanolaminates HfO2-ZrO2 for Ultrafast Logic-in-Memory Operations
  • 2023-06-21
  • Small, Vol.19
  • John Wiley and Sons Inc
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
  • Yun, Chaewon;
  • Kim, Sangwan;
  • Cho, Seongjae;
  • Cho, Il Hwan;
  • Kim, Hyunwoo;
  • Kim, Jang Hyun;
  • Kim, Garam
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.207-214
  • Institute of Electronics Engineers of Korea
Room-Temperature Quantum Diodes with Dynamic Memory for Neural Logic Operations
  • 2023-12-06
  • ACS Applied Materials and Interfaces, Vol.15, pp.56003-56013
  • American Chemical Society
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