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Showing results 1 to 10 of 315 (Search time: 0.0 seconds).

Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Switchable Polar Nanotexture in Nanolaminates HfO2-ZrO2 for Ultrafast Logic-in-Memory Operations
  • 2023-06-21
  • Small, Vol.19
  • John Wiley and Sons Inc
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
  • 2023-04-01
  • Surfaces and Interfaces, Vol.37
  • Elsevier B.V.
Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputteroa mark
  • 2024-09-01
  • Nanomaterials, Vol.14
  • Multidisciplinary Digital Publishing Institute (MDPI)
Ultrahigh-speed absolute temperature sensing using ferroelectric HfO2 enabled by transient negative differential capacitanceoa mark
  • 2024-08-30
  • Nanoscale, Vol.16, pp.18027-18037
  • Royal Society of Chemistry
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
  • Lee, Suk Hyun;
  • Park, Han Sol;
  • Shin, Seong Jae;
  • Lee, In Soo;
  • Ryoo, Seung Kyu;
  • Byun, Seungyong;
  • Kim, Kyung Do;
  • Moon, Taehwan;
  • Hwang, Cheol Seong
  • 2024-12-01
  • Applied Physics Reviews, Vol.11
  • American Institute of Physics
First Demonstration of Thermally Stable Zr:HfO2Ferroelectrics via Inserting AlN Interlayer
  • Lee, Sangmok;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.1578-1581
  • Institute of Electrical and Electronics Engineers Inc.
고 유전물질을 절연체 박막으로 적용한 금속-강유전체-절연체-금속 구조의 강유전체 터널링 접합 특성 분석
  • 최문정
  • 2022-02
  • The Graduate School, Ajou University
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