Ajou University repository

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Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
  • 2018-01-01
  • Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.36
  • AVS Science and Technology Society
Production of Hydrogen-Rich Syngas from Dimethyl Ether by Using a Microwave Steam Plasma
  • Uhm, Han S.;
  • Choi, Chang H.;
  • Lee, Joo Y.;
  • Kim, Dong J.;
  • Woo, Sang G.;
  • Woo, Minwoo;
  • Lee, Dong C.
  • 2019-09-01
  • Journal of the Korean Physical Society, Vol.75, pp.460-465
  • Korean Physical Society
Control of selectivity in methane conversion reactions in RF plasma: the influence of reaction conditions
  • 2018-06-01
  • Research on Chemical Intermediates, Vol.44, pp.3761-3771
  • Springer Netherlands
Low Global Warming C4H3F7O Isomers for Plasma Etching of SiO2and Si3N4Films
  • Kim, Yongjae;
  • Kim, Seoeun;
  • Kang, Hojin;
  • You, Sanghyun;
  • Kim, Changkoo;
  • Chae, Heeyeop
  • 2022-08-15
  • ACS Sustainable Chemistry and Engineering, Vol.10, pp.10537-10546
  • American Chemical Society
New plasma etching techniques for control over Si and SiO2 etch profiles
  • 조성운
  • 2015-08
  • The Graduate School, Ajou University
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
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