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GaAs 기판 위에 성장시킨 고효율 InGaP/InGaAs 이중접합 태양전지의 특성
  • Hieu, Nguyen Pham Trung
  • 2009-06
  • The Graduate School, Ajou University
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
  • 2018-01-31
  • Thin Solid Films, Vol.646, pp.173-179
  • Elsevier B.V.
Growth of bilayer MoS2 flakes by reverse flow chemical vapor deposition
  • 2023-09-01
  • Materials Letters, Vol.346
  • Elsevier B.V.
Chinese Cross-border M&As in Developed Countries and the Acquirers’ Domestic Performance
  • QU, HANG
  • 2017-08
  • The Graduate School, Ajou University
Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy
  • Kim, Honghyuk;
  • Kim, Kangho;
  • Guan, Yingxin;
  • Lee, Jaejin;
  • Kuech, Thomas F.;
  • Mawst, Luke J.
  • 2018-06-18
  • Applied Physics Letters, Vol.112
  • American Institute of Physics Inc.
Fabrication and characterization of grade doped InGaP/InGaAs/Ge triple-junction solar cells grown by MOVPE
  • Jung, sang hyun
  • 2016-08
  • The Graduate School, Ajou University
Improved growth control of atomically thin WSe2 flakes using pre-deposited W source
  • 2021-11-01
  • Journal of Materials Science: Materials in Electronics, Vol.32, pp.26716-26725
  • Springer
Epitaxial Growth of High Efficiency Germanium Solar Cells by MOCVD
  • Kim, Youngjo
  • 2016-02
  • The Graduate School, Ajou University
Single phase ZnV2O6 nanorods with excellent visible light photodetection capability
  • Kim, Kyung Min;
  • Cho, Hyeon Ho;
  • Yu, Hak Ki;
  • Kim, Myung Hwa
  • 2023-03-25
  • Journal of Alloys and Compounds, Vol.938
  • Elsevier Ltd
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