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to 10 of 11362 (Search time: 0.016 seconds).
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors
Lee, Yujin;
Nam, Taewook;
Seo, Seunggi;
Yoon, Hwi;
Oh, Il Kwon
;
Lee, Chong Hwon;
Yoo, Hyukjoon;
Kim, Hyun Jae;
Choi, Wonjun;
Im, Seongil;
Yang, Joon Young;
Choi, Dong Wook;
Yoo, Choongkeun;
Kim, Ho Jin;
Kim, Hyungjun
2021-05-05
ACS Applied Materials and Interfaces, Vol.13, pp.20349-20360
American Chemical Society
Direct Observation for Distinct Behaviors of Gamma-Ray Irradiation-Induced Subgap Density-of-States in Amorphous InGaZnO TFTs by Multiple-Wavelength Light Source
oa mark
Yoo, Jaewook;
Jo, Hyeun Seung;
Jeon, Seung Bae;
Moon, Taehwan
;
Lee, Hongseung;
Lim, Seongbin;
Song, Hyeonjun;
Lee, Binhyeong;
Yoon, Soon Joo;
Kim, Soyeon;
Park, Minah;
Park, Seohyeon;
Jeong, Jo Hak;
Heo, Keun;
Lee, Yoon Kyeung;
Ye, Peide D.;
Kim, Tae Wan;
Bae, Hagyoul
2024-08-01
Advanced Electronic Materials, Vol.10
John Wiley and Sons Inc
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin-Film Transistors
Kim, Wonsik;
Lee, Won June;
Kwak, Taehyun;
Baek, Seokhyeon;
Lee, Seung Hoon;
Park, Sungjun
2022-04-01
Advanced Materials Interfaces, Vol.9
John Wiley and Sons Inc
Extremely high photoconductivity ultraviolet-light sensor using amorphous In–Ga–Zn–O thin-film-transistor
Park, Jin Seong;
Seo, Hyung Tak
;
Park, Jea Gun
2021-06-01
Journal of the Korean Physical Society, Vol.78, pp.1221-1226
Korean Physical Society
Bias-stress-stable sub-1.5V oxide thin-film transistors via synergistic composition of sol-gel quaternary high-k oxide dielectrics
oa mark
Baek, Seokhyeon;
Choi, Jun Gyu;
Lee, Won June;
Kwak, Taehyun;
Jo, Yong Ryun;
Park, Sungjun
2024-08-05
Journal of Alloys and Compounds, Vol.994
Elsevier Ltd
Quantitative and rapid detection of iodide ion via electrolyte-gated IGZO thin-film transistors
Hwang, Chuljin;
Kwak, Taehyun;
Kim, Chang Hyun;
Kim, Joo Hee;
Park, Sungjun
2022-02-15
Sensors and Actuators B: Chemical, Vol.353
Elsevier B.V.
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
Choi, Ae Rim;
Lim, Dong Hyun;
Shin, So Yeon;
Kang, Hye Joo;
Kim, Dohee;
Kim, Ja Yong;
Ahn, Youngbae;
Ryu, Seung Wook;
Oh, Il Kwon
2024-03-12
Chemistry of Materials, Vol.36, pp.2194-2219
American Chemical Society
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