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Showing results 1 to 10 of 6366 (Search time: 0.0 seconds).

Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
  • Kim, Y. C.;
  • Son, B. H.;
  • Jeong, H. Y.;
  • Park, K. H.;
  • Ahn, Y. H.
  • 2019-04-01
  • Current Applied Physics, Vol.19, pp.406-410
  • Elsevier B.V.
Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
Junction Temperature Estimation of Direct-Drive GaN HEMTs in Two-Level Inverters for Driving PMSM Through Power Loss Analysis
  • 2024-05-01
  • Journal of Electrical Engineering and Technology, Vol.19, pp.2205-2216
  • Korean Institute of Electrical Engineers
Pt/graphene/SiO2 다중 게이트 구조의 AlGaN/GaN HEMT 기반 고감도 수소센서
  • 안정호
  • 2020-02
  • The Graduate School, Ajou University
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platformoa mark
  • Pyo, Ju Young;
  • Jeon, Jin Hyeok;
  • Koh, Yumin;
  • Cho, Chu young;
  • Park, Hyeong Ho;
  • Park, Kyung Ho;
  • Lee, Sang Woon;
  • Cho, Won Ju
  • 2018-08-01
  • AIP Advances, Vol.8
  • American Institute of Physics Inc.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures
  • Choi, Hyungkook;
  • Nam, Youngwoo;
  • Lee, Jae Hyun;
  • Son, Seok Kyun
  • 2020-06-01
  • Journal of the Korean Physical Society, Vol.76, pp.1083-1087
  • Korean Physical Society
그래핀 위의 촉매 금속 구조 게이트를 이용한 AlGaN/GaN MIS HEMT 기반 가스 센서
  • 김다희
  • 2021-08
  • The Graduate School, Ajou University
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