Abstract
In this paper we report on the enhancement of cathodo-
luminescence in InGaN/GaN light-emitting diode with nano-hole array after KOH wet chemical treatments. The square lattice array of nano-hole with diameter/periodicity of 200/500nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to penetrate into the active layer through the thin p-cladding layer. When the holes go through the multi quantum well, the LEDs would suffer from non-radiative recombination duo to the presence of a large amount of sidewall defects induced during plasma etching. It can be removed by using KOH wet etching treatments. Light emission from LED was investigated by cathodoluminescence(CL) measurement. The CL intensity of LED at 310nm-depth increased approximately 46% compared to that of without KOH wet chemical treatments and about 8times compared to that of as-grown LED.
