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N+P+P-N+ 구조를 가진 TVS용 Punch-through 다이오드의 항복전압 특성
  • 송세원
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dc.contributor.advisor정상구-
dc.contributor.author송세원-
dc.date.issued2003-
dc.identifier.other4972-
dc.identifier.urihttps://dspace.ajou.ac.kr/handle/2018.oak/7103-
dc.description학위논문(석사)--아주대학교 대학원 :전자공학과,2003-
dc.description.tableofcontentstest-
dc.language.isokor-
dc.publisherThe Graduate School, Ajou University-
dc.rights아주대학교 논문은 저작권에 의해 보호받습니다.-
dc.titleN+P+P-N+ 구조를 가진 TVS용 Punch-through 다이오드의 항복전압 특성-
dc.typeThesis-
dc.contributor.affiliation아주대학교 일반대학원-
dc.contributor.department일반대학원 전자공학과-
dc.date.awarded2003. 2-
dc.description.degreeMaster-
dc.identifier.urlhttp://dcoll.ajou.ac.kr:9080/dcollection/jsp/common/DcLoOrgPer.jsp?sItemId=000000004972-
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