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Atomic-Scale Interface Modification in Complex Oxide Heterojunctions for Near-Infrared Photodetection
  • Ryou, Sanghyeok ;
  • Mo, Sanghyeon ;
  • Kim, Doyeop ;
  • Choi, Sungjun ;
  • Oh, Jaewhan ;
  • Yang, Yongsoo ;
  • Eom, Kitae ;
  • Lee, Hyungwoo
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Publication Year
2024-12-24
Publisher
American Chemical Society
Citation
ACS Nano, Vol.18, pp.34606-34614
Keyword
interfacial band alignmentsLaAlO3near-infrared photodetectionperovskite oxidepolar layerSchottky junctions
Mesh Keyword
Band alignmentsInterfacial band alignmentLaAlO 3Near InfraredNear-infraredNear-infrared photodetectionPerovskite oxidesPhoto detectionPolar layersSchottky junctions
All Science Classification Codes (ASJC)
Materials Science (all)Engineering (all)Physics and Astronomy (all)
Abstract
Photodetectors that detect near-infrared (NIR) light serve as important components in contemporary energy-efficient optoelectronic devices. However, detecting the low-energy photons of the NIR light has long been challenging since the ease of photoexcitation inevitably involves increasing the background current in the dark. Herein, we report the atomic-scale interface modification in SrRuO3/LaAlO3/Nb-doped SrTiO3 (SRO/LAO/Nb:STO) heterostructures for NIR photodetection. The interfacial band alignment by a polar monolayer LAO allows precise tuning of the Schottky barrier to achieve a specific energy band profile suitable for the NIR photodetection. The SRO/LAO/Nb:STO heterojunctions show a high photoresponsivity up to ∼1.1 mA/W under NIR light irradiation (λ = 850 nm), while keeping the pA-scale dark current. The increase in the responsivity by interface modification is evaluated at a maximum of 1371%. Based on the enhanced NIR photoresponsivity, as a proof of concept, we demonstrate the spatial imaging of NIR signals using a conceptual array of SRO/LAO/Nb:STO heterojunctions. In addition, the experimental-data-based simulation verifies that the array device can implement pulse-number-dependent plasticity, which is based on the characteristic persistent photoconductivity. This study suggests that atomic-scale interface modification is a facile and powerful method for optimizing the photoresponsive properties of complex-oxide-based heterojunctions.
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/34665
DOI
https://doi.org/10.1021/acsnano.4c09023
Fulltext

Type
Article
Funding
This research was supported by Global - Learning & Academic research institution for Master\\u2019s PhD students and Postdocs (G-LAMP) Program of the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education (No. RS-2023-00285390). H.L. acknowledges the support by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2021R1C1C101121914 and RS-2024-00399417). K.E. acknowledges the support by National Research Foundation of Korea through the Basic Science Research Program (NRF-2022R1C1C2010693) and the Korean government (MSIT) (No. RS-2024-00443721). Y.Y. acknowledges support by NRF grant funded by MSIT (RS-2023-00208179). The FIB sample preparation (FEI Helios G4) and STEM imaging (ThermoFisher Spectra Ultra) were conducted at the KAIST Analysis Center for Research Advancement (KARA). Excellent support by Tae Woo Lee, Jin-Seok Choi, and the staff of KARA is gratefully acknowledged. The STEM data analyses were partially supported by the KAIST Quantum Research Core Facility Center (KBSI-NFEC grant funded by Korea government MSIT, PG2022004-09).
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