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Progressive Control of Rashba State on Topological Dirac Semimetal KZnBi
  • Lee, Gyubin ;
  • Koo, Jahyun ;
  • Lee, Yeonghoon ;
  • Cha, Jaehun ;
  • Hyun, Jounghoon ;
  • Han, Kimoon ;
  • Lim, Chan Young ;
  • Denlinger, Jonathan D. ;
  • Kim, Sunghun ;
  • Kim, Sung Wng ;
  • Kim, Yeongkwan
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Publication Year
2024-10-30
Publisher
American Chemical Society
Citation
Nano Letters, Vol.24, pp.13727-13732
Keyword
2DEG statesARPES measurementsDFT calculationsRashba statesTopological Dirac semimetal
Mesh Keyword
2DEG stateAdvanced applicationsAngle resolved photoemission spectroscopyARPES measurementDFT calculationFirst principle calculationsMetal depositionRashba stateSpecific materialsTopological dirac semimetal
All Science Classification Codes (ASJC)
BioengineeringChemistry (all)Materials Science (all)Condensed Matter PhysicsMechanical Engineering
Abstract
Rashba states have been actively revisited as a platform for advanced applications such as spintronics and topological quantum computation. Yet, access to the Rashba state is restricted to the specific material sets, and the methodology to control the Rashba state is not established. Here, we report the Rashba states on the (001) surface of KZnBi, a 3D Dirac semimetal. Using angle-resolved photoemission spectroscopy and first-principles calculations, we investigated the evolution of Rashba states under different surface conditions controlled by alkali metal deposition. We observed that restoring surface ordering enables a Rashba state, which is absent in freshly cleaved surfaces. Interestingly, we were able to modify the dispersion of the Rashba state from an ordinary parabolic dispersion to a linearly dispersing Dirac-like state by additional alkali-metal deposition. Our findings provide a methodology for engineering the properties of Rashba states for advanced applications and redefine topological systems as generic hosts of Rashba states.
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/34564
DOI
https://doi.org/10.1021/acs.nanolett.4c03802
Fulltext

Type
Article
Funding
This work was supported by the Korea Research Institute of Standards and Science and the National Research Foundation of Korea, Grants No. KRISS-GP2024-0015, No. 2022R1A2C2004735and No. RS-2024-00345856. This work was also supported by the National Supercomputing Center with supercomputing resources, including technical support (KSC-2023-CRE-0322). The work at Ajou University was supported by Global - Learning & Academic research institution for Master\\u2019s\\u00B7PhD students, and Postdocs (G-LAMP) Program of the NRF funded by the Ministry of Education (No. RS-2023-00285390). The Advanced Light Source (ALS) is supported by the Office of Basic Energy Science of the U.S. DOE under Contract No. DE-AC02-05CH11231.
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Kim, Sunghun 김성헌
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