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Facile High-Yield Growth of One-Dimensional van der Waals Ta2Pd3Se8 via Chemical Vapor Transport Using PdCl2 as a Transport Agent
  • Zhang, Xiaojie ;
  • Kang, Jinsu ;
  • Choi, Kyung Hwan ;
  • Jeon, Jiho ;
  • Jeong, Byung Joo ;
  • Bang, Hyeon Seok ;
  • Oh, Hyung Suk ;
  • Lim, Jongwoo ;
  • Park, Jae Hyuk ;
  • Lee, Jae Hyun ;
  • Yu, Hak Ki ;
  • Choi, Jae Young
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Publication Year
2024-03-12
Publisher
American Chemical Society
Citation
Chemistry of Materials, Vol.36, pp.2533-2543
Mesh Keyword
Chemical Vapour TransportHigher yieldMaximum optimisationOne-dimensionalSynthesis processSynthesis temperaturesSynthesis timeTransport agentVan der WaalYield growth
All Science Classification Codes (ASJC)
Chemistry (all)Chemical Engineering (all)Materials Chemistry
Abstract
Chemical vapor transport (CVT) is a commonly used method for growing single crystals. Halogens and their compounds are widely employed as transport agents owing to their low sublimation points. To increase the yield of produce, this study explored the species type and amount of transport agents as well as the synthesis temperature and time to achieve the maximum optimization of the synthesis process of Ta2Pd3Se8 nanowires. Four transport agents, namely, PdCl2, PdBr2, I2, and Se, were thermodynamically analyzed and compared, and PdCl2 was deemed the most suitable agent for Ta2Pd3Se8 field-effect transistor applications. The high current on/off ratio of approximately 105 and mobility of 13.8 cm2 V-1 s-1 obtained for the Ta2Pd3Se8 nanowires via the improved CVT method were further confirmed by analyzing their electrical properties. Additionally, a method for selecting the optimal transport agent, amount of transport agent, and temperature and time of the CVT reaction is presented for growing single crystals with maximum yields.
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/33993
DOI
https://doi.org/10.1021/acs.chemmater.3c03335
Fulltext

Type
Article
Funding
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Korean government (MSIT) (2023-00208311). Also, this work was supported by the KIST Institutional Program (Project No. 2E31854-22-066) and the Technology Innovation Program (20024822, development of low dielectric constant hybrid substrate for 6G terahertz communication) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).
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Yu, Hak Ki류학기
Department of Materials Science Engineering
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