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Synthesis and Characterization of High-Quality Ta2O5 Nanoparticles for Highly Selective SAW-Based DUV Sensor and Corona Detection Application
  • Kim, Sihyeok ;
  • Nawaz, Faisal ;
  • Choi, Cheol ;
  • Jeon, Il ;
  • Lee, Keekeun
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Publication Year
2024-02-05
Publisher
John Wiley and Sons Inc
Citation
Advanced Materials Technologies, Vol.9
Keyword
corona discharge detectionDUV sensorssensor interfacessurface acoustic wavesTa2O5 nanoparticles
Mesh Keyword
Corona discharge detectionCorona dischargesDeep ultravioletDeep-ultraviolet sensorSensor interfaceSolar blindSurface acoustic wavesTa2O5 nanoparticleUltra-violet photodetectorsUltraviolet sensors
All Science Classification Codes (ASJC)
Materials Science (all)Mechanics of MaterialsIndustrial and Manufacturing Engineering
Abstract
In recent times, significant progress is made in the development of solar-blind deep-ultraviolet (DUV) photodetectors (200–280 nm) due to their potential applications for military and civil purposes. In this study, the development of a novel solar-blind DUV photodetector based on tantalum pentoxide (Ta2O5) nanoparticles (NPs) utilizing Surface Acoustic Wave (SAW) sensor integrated with Interface electronics is reported for the first time. The 3-D Ta2O5 NPs surface morphology, crystallinity, and defect state level is discussed using various analytical techniques, including scanning electron microscope (SEM), X-ray diffraction (XRD), and spectrophotometer. The developed 3-D Ta2O5 NPs based photodetector exhibits high sensitivity to 254 nm DUV irradiation (5 µW cm−2), demonstrating excellent photoresponse characteristics. The performance parameters including highest sensitivity, fast response/recovery time are measured as 1621.1 ppm (mW cm−2)−1, 3.7s/19.8s, respectively. Subsequent analysis demonstrates the stability and repeatability of the photodetector, enabling its potential to real time corona discharge detection. With its inherent advantages, the current DUV photodetector utilizing Ta2O5 NPs exhibits great potential for future applications in DUV optoelectronics.
ISSN
2365-709X
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/33845
DOI
https://doi.org/10.1002/admt.202301486
Fulltext

Type
Article
Funding
This research work was supported by the Korea Electric Power Corporation (R22XO02\u201017) and the National Research Foundation of Korea (NRF2022R1F1A1074313).
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Department of Electrical and Computer Engineering
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